The study of leakage current in thin oxide is a crucial point to study the reliability of future technologies based on MOS transistors and integrated memories.
The race of devices’ integration tends to reduce thickness of their insulator until few nanometers, which is promoting leakage current. At these scales, currents do not follow laws of classical physics but these of quantum physics (tunnel injection mode).
This paper will be the subject of a comparative study between experimental s measures obtained during an important battery tests, realized on prototypes with a thickness lower than 5nm, and no measurable parameters’ extraction. This study will finish with a confrontation between experimental results models listed in the bibliography.